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| SMP80MC TRISILTM for telecom equipment protection Features Bidirectional crowbar protection Voltage: range from 120 V to 320 V Low VBO / VR ratio Micro capacitance equal to 12 pF @ 50 V Low leakage current : IR = 2 A max Holding current: IH = 150 mA min Repetitive peak pulse current : IPP = 80 A (10/1000 s) SMB (JEDEC DO-214AA) Main applications Any sensitive equipment requiring protection against lightning strikes and power crossing: Order codes Part Number SMP80MC-120 SMP80MC-140 SMP80MC-160 SMP80MC-200 SMP80MC-230 Marking TP12 TP14 TP16 TP20 TP23 TP27 TP32 Terminals (phone, fax, modem...) and central office equipment Description The SMP80MC is a series of micro capacitance transient surge arrestors designed for the protection of high debit rate communication equipment on CPE side. Its micro capacitance avoids any distortion of the signal and is compatible with digital transmission like ADSL2 and ADSL2+. SMP80MC-270 SMP80MC-320 Schematic diagram Benefits Trisils are not subject to ageing and provide a fail safe mode in short circuit for a better protection. They are used to help equipment to meet main standards such as UL1950, IEC950 / CSA C22.2 and UL1459. They have UL94 V0 approved resin. SMB package is JEDEC registered (DO-214AA). Trisils comply with the following standards GR1089 Core, ITU-T-K20/K21, VDE0433, VDE0878, IEC61000-4-5 and FCC part 68. TM: TRISIL is a trademark of STMicroelectronics. January 2007 Rev 4 1/10 www.st.com 10 Characteristics SMP80MC 1 Characteristics Table 1. Complies with the following standards Peak Surge Voltage (V) 2500 1000 5000 1500 6000 1500 8000 15000 4000 2000 4000 2000 4000 4000 1500 800 1000 Required Waveform peak current Voltage (A) 2/10 s 10/1000 s 2/10 s 2/10 s 10/700 s 1/60 ns 10/700 s 1.2/50 s 10/700 s 1.2/50 s 10/160 s 10/560 s 9/720 s 500 100 500 100 150 37.5 Minimum serial Current resistor to meet waveform standard () 2/10 s 10/1000 s 2/10 s 2/10 s 5/310 s 5 2.5 10 0 10 0 0 0 0 0 0 0 0 0 2.5 0 0 STANDARD GR-1089 Core First level GR-1089 Core Second level GR-1089 Core Intra-building ITU-T-K20/K21 ITU-T-K20 (IEC61000-4-2) VDE0433 VDE0878 IEC61000-4-5 FCC Part 68, lightning surge type A FCC Part 68, lightning surge type B ESD contact discharge ESD air discharge 100 50 100 50 100 100 200 100 25 5/310 s 1/20 s 5/310 s 8/20 s 10/160 s 10/560 s 5/320 s Table 2. Symbol Absolute ratings (Tamb = 25 C) Parameter Conditions Value 80 200 100 120 150 200 250 5 14 8 6.5 2 7.5 7.8 -55 to 150 150 Unit IPP Repetitive peak pulse current (see Figure 1) IFS ITSM I2t Tstg Tj TL Fail-safe mode : maximum current (1) Non repetitive surge peak on-state current (sinusoidal) I2t value for fusing 10/1000 s 8/20 s 10/560 s 5/310 s 10/160 s 1/20 s 2/10 s 8/20 s t = 0.2 s t=1s t=2s t = 15 mn t = 16.6 ms t = 20 ms A kA A A2s C Storage temperature range Maximum junction temperature Maximum lead temperature for soldering during 10 s. 260 C 1. in fail safe mode, the device acts as a short circuit 2/10 SMP80MC Table 3. Symbol Rth(j-a) Rth(j-l) Characteristics Thermal resistances Parameter Junction to ambient (with recommended footprint) Junction to leads Value 100 20 Unit C/W C/W Table 4. Symbol VRM VBR VBO IRM IPP IBO IH VR IR C Electrical characteristics (Tamb = 25 C) Parameter Stand-off voltage Breakdown voltage Breakover voltage Leakage current Peak pulse current Breakover current Holding current Continuous reverse voltage Leakage current at VR Capacitance Dynamic Static VBO(2) VBO @ IBO(3) max. V 120 140 160 5 200 230 270 320 V 155 180 205 255 295 345 400 max. V 155 180 205 255 295 345 400 800 150 12 25 max. mA IRM @ VRM Types max. A SMP80MC-120 SMP80MC-140 SMP80MC-160 SMP80MC-200 SMP80MC-230 SMP80MC-270 SMP80MC-320 2 V 108 126 144 180 207 243 290 IR @ VR(1) max. A IH(4) min. mA C(5) typ. pF C(6) typ. pF 1. IR measured at VR guarantee VBR min VR 2. See Figure 9 functional test circuit 1 3. See Figure 10 test circuit 2 4. See Figure 11 functional holding current test circuit 3 5. VR = 50 V bias, VRMS = 1 V, F= 1 MHz 6. VR = 2 V bias, VRMS = 1 V, F = 1 MHz 3/10 Characteristics SMP80MC Figure 1. Pulse waveform Figure 2. ITSM(A) Non repetitive surge peak on-state current versus overload duration % I PP 100 Repetitive peak pulse current tr = rise time (s) tp = pulse duration time (s) 40 35 30 25 F=50Hz Tj initial = 25C 50 20 15 10 0 tr Figure 3. tp t 5 t(s) 0 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 On-state voltage versus on-state current (typical values) Figure 4. Relative variation of holding current versus junction temperature IT(A) 100 Tj=25C IH[Tj] / IH[Tj=25C] 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 VT(V) 10 0 1 2 3 4 5 6 7 8 0.2 0.0 -40 -30 -20 -10 0 10 20 30 Tj(C) 40 50 60 70 80 90 100 110 120 130 Figure 5. Relative variation of breakover voltage versus junction temperature Figure 6. Relative variation of leakage current versus junction temperature (typical values) VBO[Tj] / VBO[Tj=25C] 1.08 1.07 1.06 1.05 1.04 1.03 1.02 1.01 1.00 0.99 0.98 0.97 0.96 0.95 0.94 -40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 110 120 130 1.E+01 1.E+02 1.E+03 IR[Tj] / IR[Tj=25C] VR=243V Tj(C) 1.E+00 25 50 Tj(C) 75 100 125 4/10 SMP80MC Characteristics Figure 7. Figure 8. Variation of thermal impedance junction to ambient versus pulse duration (Printed circuit board FR4, SCu=35m, recommended pad layout) 1.2 1.1 1.0 0.9 Relative variation of junction capacitance versus reverse voltage applied (typical values) Zth(j-a)/Rth(j-a) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.0 1.E-02 1.E-01 1.E+00 1.E+01 1.E+02 1.E+03 C [VR] / C [VR=2V] F =1MHz VOSC = 1VRMS Tj = 25C 0.8 0.7 0.6 0.5 0.4 0.3 0.2 tp(s) 0.1 0.0 1 10 VR(V) 100 1000 Figure 9. Test circuit 1 for dynamic IBO and VBO parameters 100 V / s, di /dt < 10 A / s, Ipp = 80 A 2 45 66 470 83 0.36 nF 46 H U 10 F KeyTek 'System 2' generator with PN246I module 1 kV / s, di /dt < 10 A / s, Ipp = 10 A 26 H 250 12 47 46 H U 60 F KeyTek 'System 2' generator with PN246I module 5/10 Characteristics Figure 10. Test circuit 2 for IBO and VBO parameters K ton = 20ms R1 = 140 R2 = 240 220V 50Hz Vout VBO measurement SMP80MC DUT 1/4 IBO measurement TEST PROCEDURE Pulse test duration (tp = 20ms): for Bidirectional devices = Switch K is closed for Unidirectional devices = Switch K is open VOUT selection: Device with VBO < 200V VOUT = 250 VRMS, R1 = 140 Device with VBO 200V VOUT = 480 VRMS, R2 = 240 Figure 11. Test circuit 3 for dynamic IH parameter R Surge generator VBAT = - 48 V D.U.T This is a GO-NOGO test which allows to confirm the holding current (IH) level in a functional test circuit. TEST PROCEDURE 1/ Adjust the current level at the IH value by short circuiting the AK of the D.U.T. 2/ Fire the D.U.T. with a surge current IPP = 10A, 10/1000s. 3/ The D.U.T. will come back off-state within 50ms maximum. 6/10 SMP80MC Ordering Information Scheme 2 Ordering Information Scheme SMP Trisil surface mount Repetitive peak pulse current 80 = 80A Capacitance MC = Micro Capacitance Voltage 120 = 120 V 140 = 140 V 160 = 160 V 200 = 200 V 230 = 230 V 270 = 270 V 320 = 320 V 80 MC - xxx 7/10 Package information SMP80MC 3 Package information Epoxy meets UL94, V0 SMB dimensions Dimensions Ref. E1 Table 5. Millimeters Min. Max. 2.45 0.20 2.20 0.40 5.60 4.60 3.95 1.50 Inches Min. 0.075 0.002 0.077 0.006 0.201 0.159 0.130 0.030 Max. 0.096 0.008 0.087 0.016 0.220 0.181 0.156 0.059 D A1 A2 b 1.90 0.05 1.95 0.15 5.10 4.05 3.30 0.75 E c A1 E E1 b C L A2 D L Figure 12. Footprint (dimensions in mm) 1.62 2.60 1.62 2.18 5.84 In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com. 8/10 SMP80MC Ordering information 4 Ordering information Part Number SMP80MC-120 SMP80MC-140 SMP80MC-160 SMP80MC-200 SMP80MC-230 SMP80MC-270 SMP80MC-320 Marking TP12 TP14 TP16 TP20 TP23 TP27 TP32 SMB 0.11 g 2500 Tape and reel Package Weight Base qty Delivery mode 5 Revision history Date September-2001 11-May-2005 20-Jun-2005 18-Jan-2007 Revision 1 2 3 4 First issue. New types introduction. Qualification of new types Reformatted to current standards. Added product SMP80MC-320 Description of Changes 9/10 SMP80MC Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. 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UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER'S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. (c) 2007 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 10/10 |
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